Semiconductor laser device and manufacture thereof
文献类型：专利
| 作者 | NISHIMOTO HIROYUKI |
| 发表日期 | 1989-09-04 |
| 专利号 | JP1989220493A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and manufacture thereof |
| 英文摘要 | PURPOSE:To obtain a device characterized by excellent mass productivity and excellent reliability, by covering a part other than the vicinity of a light emitting region with a high resistance semiconductor layer, removing an inner parasitic capacity as much as possible, removing an Si nitride film, evaporating (p) and (n) electrodes at the same time, and forming both electrodes in an isolated manner. CONSTITUTION:With an Si nitride film 11 as a mask, an InP semi-insulating substrate 1 is etched to the depth of about a half of the thickness. With the film 11 as a mask, a buffer layer 2, an active layer 3, a clad layer 4 and a contact layer 5 are sequentially formed on the etched surface. Thereafter, the film 11 is removed by using buffered fluoric acid. An Si nitride film 12 is newly formed. With the film 12 as a mask, the layers 2, 3, 4 and 5 are etched until the layer 2 is exposed by using bromomethyl solution. Then, the film 12 is removed with the buffered fluoric acid. A p-side electrode 7 and an n-side electrode 6 are evaporated at the same time, and the electrodes 7 and 6 are formed in an isolated manner. Heat treatment is performed in an H atmosphere. The lower surface of the substrate 1 is polished so as to obtain a mirror surface. Ti and Au are formed on the side of the semi-insulating substrate as fusing metals, and a fusing electrode 8 is formed. |
| 公开日期 | 1989-09-04 |
| 申请日期 | 1988-02-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86696]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | NISHIMOTO HIROYUKI. Semiconductor laser device and manufacture thereof. JP1989220493A. 1989-09-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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