Semiconductor laser device
文献类型：专利
| 作者 | SHIGE NORIYUKI |
| 发表日期 | 1984-08-02 |
| 专利号 | JP1984134888A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a buried hetero type semiconductor laser device which has power more than 5mW by reducing the thickness of an active layer which emits a laser light to the specific value, thereby controlling the light enclosure coefficient to leak the light. CONSTITUTION:an N type clad layer 2 made of Ga1-xAlxAs(x=0.37), a GaAs active layer 3 and a P type GaAlAs clad layer 4 of mixed crystal ratio x=0.37 are laminated at the center on the upper surface of an N type GaAs substrate 1, and liquid phase epitaxially grown. Then, the layers 4, 3 of both sides are etched and removed except the central stripe, etched to the course in depth of the substrate 1 in a mesa shape, and buried with an N type GaAlAs layer 5 thereat. Subsequently, a low resistance P type contacting layer 8 intruded into the end of the layer 5 is diffused on the surface layer of the layer 4, an Au electrode 6 is covered on the surface including the layer 8 and an Au electrode 7 is covered on the back surface of the substrate In this structure, the thicknesses of the layers 5, 4 are formed in approx. 1-2mum, and the thickness of the active layer is reduced to 0.03-0.07mum, and the width to 2-3mum. |
| 公开日期 | 1984-08-02 |
| 申请日期 | 1983-01-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86699]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | SHIGE NORIYUKI. Semiconductor laser device. JP1984134888A. 1984-08-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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