Integrated type semiconductor laser
文献类型：专利
| 作者 | KITAMURA MITSUHIRO; YAMAGUCHI MASAYUKI |
| 发表日期 | 1986-09-30 |
| 专利号 | JP1986220389A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Integrated type semiconductor laser |
| 英文摘要 | PURPOSE:To reduce the interface level and deep level of an optical guide layer, to inject carriers effectively and to obtain excellent wavelength control characteristics by constituting the optical guide layer formed into a control region from two or more of semiconductor layers. CONSTITUTION:A diffraction grating 6 is formed partially onto an n-InP substrate 5, and an n-In0.72Ga0.28As0.6P0.39 guide layer 4 corresponding to a luminous wavelength of 3mum, a non-doped In0.59Ga0.41As0.90P0.10 active layer 7 corresponding to a luminous wavelength of 5mum and a p-InP clad layer 8 are laminated on the diffraction grating in succession. Other sections are removed through etching up to the active layer 7 while leaving only a section as an active region 2. An n-InP layer 10, a second optical guide layer 11 consisting of p-In0.72Ga0.28 As0.61P0.39 corresponding to the luminous wavelength of 3mum and the p-InP clad layer 8 are laminated successively with the exception of the active region 2. Grooves 12 for isolating several region are shaped and electrodes are formed through mesa etching and buried growth in a normal process, thus acquiring a desired integrated type DBR-LD. |
| 公开日期 | 1986-09-30 |
| 申请日期 | 1985-03-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86700]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | KITAMURA MITSUHIRO,YAMAGUCHI MASAYUKI. Integrated type semiconductor laser. JP1986220389A. 1986-09-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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