Semiconductor laser
文献类型：专利
| 作者 | MIZUYOSHI AKIRA; HARADA AKINORI |
| 发表日期 | 1991-05-23 |
| 专利号 | JP1991120888A |
| 著作权人 | FUJI PHOTO FILM CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To enable easy manufacture, high output and long life by providing a superlattice buffer consisting of In1-x3Gax3Asy3P1-3y/In1-x4GaX4Asy4P1-y4 between a clad layer and a substrate. CONSTITUTION:Clad layers 2,3 (In1-x2Gax2Asy2P1-y2) is constituted which lattice- matches to an active layer 1 (Inx1Ga1-x1As). GaAs is adopted for a substrate 5, and a buffer layer 6 of GaAs likewise is formed thereon. A superlattice buffer 4 connects the buffer layer 6 consisting of GaAs and the clad layer 3 consisting of InGaP. The superlattice buffer 4 is formed out of In1-x3Gax3Asy3 P1-y3/In1-x4Gax4Asy4P1-y4. |
| 公开日期 | 1991-05-23 |
| 申请日期 | 1989-10-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86702]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJI PHOTO FILM CO LTD |
| 推荐引用方式 GB/T 7714 | MIZUYOSHI AKIRA,HARADA AKINORI. Semiconductor laser. JP1991120888A. 1991-05-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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