Semiconductor laser device
文献类型：专利
| 作者 | KUDO KAZUHIRO; TAKENAKA NAOKI; HIRAYAMA NORIYUKI; TOYODA YUKIO |
| 发表日期 | 1986-03-27 |
| 专利号 | JP1986059792A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To reflect electromagnetic waves having the same phase with an electromagnetic wave beam and to obtain high single longitudinal mode oscillation, by providing a projection having a shape corresponding to the wave front of the electromagnetic wave beam in a part of an active layer or of a waveguide adjacent thereto. CONSTITUTION:A Te doped N type InP clad layer 2, a nondoped InGaAs active layer 3, and a Zn doped P type InP clad layer 4 are grown by liquid-phase epitaxy on an Sn doped N type InP substrate A waveguide is provided therein by etching the same. A P type InP layer 5 and an N type InP layer 6 are then formed so as to bury the waveguide. The waveguide is provided with a projection. The convex internal reflecting surface 7 and 8 of the projection has a shape corresponding to the wave front of an electromagnetic beam emitted from the waveguide. Any electromagnetic wave having the same phase with an electromagnetic beam emitted from the waveguide is reflected by the internal reflecting surfaces 7 and 8, and internal interference is caused. |
| 公开日期 | 1986-03-27 |
| 申请日期 | 1984-08-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86708]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | KUDO KAZUHIRO,TAKENAKA NAOKI,HIRAYAMA NORIYUKI,et al. Semiconductor laser device. JP1986059792A. 1986-03-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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