高抵抗半導体層埋め込み型半導体レーザ
文献类型：专利
| 作者 | 中村 隆宏 |
| 发表日期 | 1998-05-15 |
| 专利号 | JP2780337B2 |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 高抵抗半導体層埋め込み型半導体レーザ |
| 英文摘要 | PURPOSE:To realize a lower threshold current a higher external differentiation quantum efficiency, and an ultra-high speed modulation characteristic by incorporating a semi-insulating semiconductor layer having a deep level for capturing electrons or holes in a current blocking layer and having a modified doping distribution. CONSTITUTION:There are epitaxially grown on an S doping n type InP substrate 11 successively a Si doping n type InP layer 18, an InGa Asp active layer 19, a Zn doping p type InP layer 20, and a Zn doping p type InGaAsP contact layer 17. Then the layers 17, 20, 19, and 18 are etched stripe-shaped in the 011 direction to grow an Fe doping high resistance InP layer 12 on a resulting recessed portion until it gets flat. Thereupon, Fe distribution is varied by changing the flow rate of the dopant. Further, mask removal, polishing, and electrode 10 are formed with annealing, and the resulting sample is cleavaged and separated to individual semiconductor lasers. Hereby, all processing is completed. |
| 公开日期 | 1998-07-30 |
| 申请日期 | 1989-05-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86709]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | 中村 隆宏. 高抵抗半導体層埋め込み型半導体レーザ. JP2780337B2. 1998-05-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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