Semiconductor light emitting device
文献类型：专利
| 作者 | HANAMITSU KIYOSHI |
| 发表日期 | 1985-10-11 |
| 专利号 | JP1985200585A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To obtain a stable laser light source having high S/N ratio as a pickup light source of video disc device by disposing a spherical lens or cylindrical lens coated with metal vapor film near the mirror surface reverse to the output light side of a semiconductor element. CONSTITUTION:A spherical lens 6 or a cylindrical lens 8 coated with a metal deposited film 7 is disposed near a mirror surface reverse to the output light side of a semiconductor laser element 15. Thus, the diffused light of emitted light by the lens 6 having a light reflectivity larger than 80% of higher coated with the metal deposited film disposed near the mirror surface 5 by utilizing an optical beam emitted from the surface 5 side reverse to the output light side, at the rear side of the junction boundary 3 is throttled to obtain the reflecting returning light of 5% or larger to increase the oscillating spectrum, thereby eliminating a problem that is weak for the incoming disturbance light which has been controlled conventionally by one oscillating spectrum range, and various noise characteristic changes, thereby realizing a light emitting unit without astigmatism. |
| 公开日期 | 1985-10-11 |
| 申请日期 | 1984-03-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86710]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | HANAMITSU KIYOSHI. Semiconductor light emitting device. JP1985200585A. 1985-10-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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