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文献类型：专利
| 作者 | HINO ISAO |
| 发表日期 | 1993-08-26 |
| 专利号 | JP1993058594B2 |
| 著作权人 | NIPPON ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To obtain visible-light semiconductor light-emitting element having excellent performance and reliability by forming a first conduction type third GaAs layer onto the surface of a first GaAs layer not coated with a second GaAs layer shaped onto the surface except one part in the surface of the first conduction type first GaAs layer and the second GaAs layer in double hetero- structure. CONSTITUTION:An n-GaAs buffer layer 42, an n-(Al0.3Ga0.7))0.5In0.5P clad layer 43, an un-doped Ga0.5In0.5P active layer 44, a p-(Al0.3Ga0.7)0.5In0.5P clad layer 45, a p-GaAs layer 46 and an n-GaAs layer 47 are grown on an n-GaAs substrate 4 The n-GaAs layer 47 is etched selectively by using a photo-resist 52 to form a striped opening 5 A p-GaAs layer 48 is grown. AsH3 may be flowed ona MOVPE method in order to protect the substrate at that time. A compound containing Al is not exposed to the surface at that time. Accordingly, a p-GaAs film obtained in this manner is extremely excellent, and a superior electrode is shaped because of an excellent crystal, thus improving the element characteristics and reliability. |
| 公开日期 | 1993-08-26 |
| 申请日期 | 1984-09-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86712]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | HINO ISAO. -. JP1993058594B2. 1993-08-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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