Manufacture of semiconductor light emitting device
文献类型：专利
| 作者 | KAKIMOTO SHOICHI; NAMISAKI HIROBUMI |
| 发表日期 | 1988-09-21 |
| 专利号 | JP1988226988A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor light emitting device |
| 英文摘要 | PURPOSE:To enable the easily manufacturing, with high yield, of a semiconductor laser capable of single wavelength oscillation, by making a first guide layer and a side layer grow on a diffraction grating and forming a second guide layer and a crescent-shaped active layer inside a striped groove formed in the side layer and suchlike CONSTITUTION:On both sides of a first conductivity type semiconductor substrate 21, second conductivity type semiconductor regions 22 to compose a current constriction structure for constricting the current are formed inside an active layer. A diffraction grating is formed at least on said semiconductor substrate 2 Next, a first guide layer 24 of the first conductivity type and a side layer 25 of the first conductivity type are made to grow serially on the said semiconductor substrate 21 and said semiconductor regions 22, and a striped groove 30 is formed in the side layer 25 so as to extend toward a resonator. In succession, a second guide layer 26 of the first conductivity type and a crescent-shaped active layer 27 are made to grow on the first guide layer 24 in the striped groove 30, and next a second conductivity type clad layer 28 and a second conductivity type contact layer 29 are made to grow serially on the active layer 27 and said side layer 25. |
| 公开日期 | 1988-09-21 |
| 申请日期 | 1987-03-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86714]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KAKIMOTO SHOICHI,NAMISAKI HIROBUMI. Manufacture of semiconductor light emitting device. JP1988226988A. 1988-09-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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