Semiconductor light-emitting device
文献类型：专利
| 作者 | YAMAGUCHI AKIO; IKEDA TOSHIYUKI |
| 发表日期 | 1987-08-25 |
| 专利号 | JP1987193190A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting device |
| 英文摘要 | PURPOSE:To enable a semiconductor laser to provide stable laser oscillation, by providing an impurity region having a conductivity type opposite to that of a high-resistance layer and formed through apertures, and an electrode contacted with the impurity region through the apertures. CONSTITUTION:An N type InP clad layer 22, an undoped InGaAsP active layer 23, a P-type InP clad layer 24 and a P type InP cap layer 25 are grown in that order on an N type InP substrate 2 An insulation film of SiO2 26 is formed and then etched to provide an aperture 26A. Using the insulation film 26 as a mask, the structure is etched to form grooves 27 reaching the N type InP substrate 2 I-type (or N type) high-resistance layers 28 are buried within the grooves 27 by means of the VPE process, and the insulation film 26 is removed. Another insulation film of SiO2 29 is newly formed. The insulation film 29 is etched to form linear apertures 29A parallel to each other. Be ions are implanted with the insulation film 29 as a mask to form a P-type inversion region 30. A P-side electrode 31 and an N side electrode 32 are further formed. A semiconductor laser obtained in this manner can provide stable laser oscillation. |
| 公开日期 | 1987-08-25 |
| 申请日期 | 1986-02-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86719]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | YAMAGUCHI AKIO,IKEDA TOSHIYUKI. Semiconductor light-emitting device. JP1987193190A. 1987-08-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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