Semiconductor laser
文献类型：专利
| 作者 | MATSUI TERUHITO; NOMURA YOSHITOKU; TOKUDA YASUKI |
| 发表日期 | 1988-02-12 |
| 专利号 | JP1988032978A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To increase internal loss of a resonator and generate laser oscillation with short wavelength, by using a medium having large light-absorptive capability outside an optical waveguide formed of an active layer having quantum-well structure, that is, in the transverseclad layered part. CONSTITUTION:A P-Alz Ga1-zAs layer 3 as a clad layer, a P-Alz Ga1-zAs parabolic refractive-index distribution layer 6, a GaAs quantum well layer 5 as an active layer, a n-Aly Ga1-yAs parabolic refractive-index distribution layer 6, a n-Alz Ga1-zAs layer 7 as a clad layer, and a n-GaAs contact layer 8 are formed in order on a substrate 2 by crystal growth method. A stripe is then mounted on the upper part to form a diffusion layer 11 by Zn diffusion method. The quantum well layer 5 as a Zn-diffused active layer allows mixed crystal to be produced with the refractive-index distribution layers 4 and 6, and therefore its forbidden band width becomes larger than that of the GaAs quantum-well layer, with its refractive index becoming smaller. Because this device is composed by utilizing an increase in absorption loss, accompanying diffusion, to increase the internal loss of the resonator on the light-absorptive region outside an optical waveguide, luminous wavelength can be made small. |
| 公开日期 | 1988-02-12 |
| 申请日期 | 1986-07-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86720]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | MATSUI TERUHITO,NOMURA YOSHITOKU,TOKUDA YASUKI. Semiconductor laser. JP1988032978A. 1988-02-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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