Semiconductor laser device
文献类型：专利
| 作者 | ITAYA KAZUHIKO; HATAGOSHI GENICHI; ISHIKAWA MASAYUKI |
| 发表日期 | 1990-10-23 |
| 专利号 | JP1990260486A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To prevent a current constriction effect from reducing by specifying Al composition and carrier concentration of a second conductivity type In1-w(Ga1-xAlx)wP clad layer. CONSTITUTION:A double hetero junction structure having a first conductivity type clad 13, an active layer 14 and a second conductivity type In1-w(Ga1-xAlx)wP clad layer 15 including a stripelike ridge, a second conductivity type In1-x(Gax-vAlv)wP (0cmcm. Thus, leakage of a current block part can be reduced with good reproducibility and an effective current constriction can be obtained. |
| 公开日期 | 1990-10-23 |
| 申请日期 | 1989-03-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86726]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | ITAYA KAZUHIKO,HATAGOSHI GENICHI,ISHIKAWA MASAYUKI. Semiconductor laser device. JP1990260486A. 1990-10-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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