Manufacture of semiconductor laser
文献类型：专利
| 作者 | KAGAWA HITOSHI; YAGI TETSUYA |
| 发表日期 | 1989-11-27 |
| 专利号 | JP1989292883A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To prevent the characteristics of each semiconductor laser from being deviated by radiating light from the upper part of an etching liquid toward a layer to be etched and by controlling the thickness of film of the layer to be etched while observing light which is reflected on the reflection surface below the layer to be etched and returns onto the etching liquid. CONSTITUTION:Light equivalent to white light is irradiated from the upper part of an etching liquid 8 toward an active layer 3. When a film thickness d of a clad layer 4 is fully thin for the liquid thickness of the etching liquid 8, the irradiated light passes through the etching liquid 8 and the clad layer 4 and then most of it is reflected by the interface with the active layer 3, thus returning to an area above the etching liquid 8 again. Thus, the color changes continuously as etching advances and change in color is constantly monitored by using an image pickup tube, a solid image pickup element etc., and etching is stopped when a specified color corresponding to a desired film thickness d is reached to allow the film thickness d to be controlled easily. It allows a semiconductor laser without any deviation of characteristics to be obtained. |
| 公开日期 | 1989-11-27 |
| 申请日期 | 1988-05-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86738]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KAGAWA HITOSHI,YAGI TETSUYA. Manufacture of semiconductor laser. JP1989292883A. 1989-11-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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