Semiconductor laser device
文献类型：专利
| 作者 | NAGASAKA HIROKO; MOGI NAOTO |
| 发表日期 | 1985-07-20 |
| 专利号 | JP1985137089A |
| 著作权人 | TOSHIBA KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To provide sufficient refractive index while increasing a clad layer in thickness by regulating the refractive indexes of a clad layer, a current blocking layer and a coating layer, thereby increasing the refractive index directly under the stripe. CONSTITUTION:A clad layer 12, an active layer 13, a clad layer 14, the first different type layer 15 and the second different type layer 16 are sequentially formed on an n type GaAs substrate 1 Then, a resist 21 is coated on the layer 16, with the resist as a mask the layers 16, 15 are etched to form a striped groove 22. Then, a coating layer 17 and a contacting layer 18 are formed. Then, electrodes 19, 20 are formed. In this case, the layer 15 has the refractive index smaller than the layer 14, and the layer 17 has the refractive index larger than the layer 15. |
| 公开日期 | 1985-07-20 |
| 申请日期 | 1983-12-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86741]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA KK |
| 推荐引用方式 GB/T 7714 | NAGASAKA HIROKO,MOGI NAOTO. Semiconductor laser device. JP1985137089A. 1985-07-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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