半導体発光装置
文献类型：专利
| 作者 | 伊藤 晃; 只友 一行 |
| 发表日期 | 1997-06-20 |
| 专利号 | JP2662792B2 |
| 著作权人 | 三菱電線工業株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体発光装置 |
| 英文摘要 | PURPOSE:To obtain the light-emitting element composed of AlGaInP mixed crystal using a GaP substrate by a method wherein the multilayer, provided on the strained superlattice located on a GaP substrate, is composed of the AlGaInP containing Al, or the GaInP active layer containing no Al, and an AlGaInP-clad layer. CONSTITUTION:A strained superlattice layer 2 is formed on a GaP substrate 1, and a multilayer having a double heterojunction such as an AlGaInP-clad layer 3, a GaInP active layer 4 containing no Al, and an AlGaInP-clad layer 5 are epitaxially grown successively from the top of the strained superlattice layer 2. By providing the strained superlattice layer 2 on the GaP substrate 1, the GaInP active layer 4 can be formed on the GaP substrate 1, and the activation of the Al-containing AlGaInP can also be made possible. Especially, as the GaInP layer 4 contains no Al, the stability and the reliability as an element can be improved sharply. |
| 公开日期 | 1997-10-15 |
| 申请日期 | 1988-03-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86746]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三菱電線工業株式会社 |
| 推荐引用方式 GB/T 7714 | 伊藤 晃,只友 一行. 半導体発光装置. JP2662792B2. 1997-06-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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