Semiconductor laser device and manufacture thereof
文献类型：专利
| 作者 | SEMURA SHIGERU; KURODA TAKARO; OOTA TSUNEAKI; NAKAJIMA HISAO |
| 发表日期 | 1986-10-24 |
| 专利号 | JP1986239686A |
| 著作权人 | AGENCY OF IND SCIENCE & TECHNOL |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and manufacture thereof |
| 英文摘要 | PURPOSE:To stabilize an oscillation wavelength, and to obtain a large optical output by arranging a plurality of light-emitting regions having quantum well type structure in series and constituting a residual region by a semiconductor having the man composition of two kinds of compound semiconductors organizing the same structure. CONSTITUTION:A P-type semiconductor layer 2 is formed onto a P-type semiconductor 1 as a lower clad layer. An active layer 4 is shaped onto the layer 2. A plurality of striped light-emitting regions 8a, 8b having quantum well type structure are disposed in series with the direction of a laser resonator at the center of the layer 4 at regular intervals 6b. The left and right both regions 6a of the regions 8a, 8b and the interval 6b are constituted by a semiconductor having the mean composition of two kinds of compound semiconductors organizing quantum well type structure. Consequently, the forbidden band width of the regions is made larger than that of the light-emitting regions, and a refractive index thereof is made smaller than those of the light-emitting regions. An N-type semiconductor layer 3 is formed onto the layer 4 as an upper clad layer. According to such formation, an oscillation wavelength is stabilized, and a large optical output is acquired by small modulation currents. |
| 公开日期 | 1986-10-24 |
| 申请日期 | 1985-04-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86750]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AGENCY OF IND SCIENCE & TECHNOL |
| 推荐引用方式 GB/T 7714 | SEMURA SHIGERU,KURODA TAKARO,OOTA TSUNEAKI,et al. Semiconductor laser device and manufacture thereof. JP1986239686A. 1986-10-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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