Semiconductor laser
文献类型：专利
| 作者 | INOUE NAOHISA; MORI KAZUHIKO; MATANO MASAHARU; YAMASHITA MAKI |
| 发表日期 | 1983-11-19 |
| 专利号 | JP1983199586A |
| 著作权人 | TATEISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To unify longitudinal mode of a semiconductor laser by providing in parallel a plurality of laser resonators of different resonance lengths in the vicinity of one light waveguide. CONSTITUTION:N type GaAlAs layer 2, P type GaAs layer 3, P type AlGaAs layer 4 and P type GaAs layer 5 are sequentially laminated on an N type GaAs substrate 1 in a semiconductor laser, striped electrodes 20, 21 are aligned in parallel in the vicinity on the upper surface. Thus, resonators corresponding to the electrodes 20, 21 are formed on the layer 3. The laser lights which are generated from two resonators are electromagnetically operated to each other, the laser resonator of long side is oscillated in sole longitudinal mode of the laser resonator of short side, and the longitudinal modes of the output lights obtained from both the laser resonators becomes sole mode. |
| 公开日期 | 1983-11-19 |
| 申请日期 | 1982-05-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86755]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TATEISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | INOUE NAOHISA,MORI KAZUHIKO,MATANO MASAHARU,et al. Semiconductor laser. JP1983199586A. 1983-11-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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