Manufacture of semiconductor light-emitting device
文献类型：专利
| 作者 | MIURA SHUICHI |
| 发表日期 | 1988-01-07 |
| 专利号 | JP1988002394A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor light-emitting device |
| 英文摘要 | PURPOSE:To control diffusion depth in the lateral direction with high accuracy by diffusing the lateral direction from the end surface of a semiconductor layer as the direction of diffusion in the control of the width of an active layer being controlled by lateral diffusion vertical in the direction of diffusion in a current injection type semiconductor laser. CONSTITUTION:Active layers are laminated alternately onto an Si-GaAs substrate 11, and a photo-resist 10 is formed as an etching mask for shaping end surfaces by using normal lithography. Both end surfaces approximately vertical to each layer are shaped through reactive ion etching. Both end surfaces are coated through sputtering, and an SiO2 layer is applied onto the whole surface of the substrate as an introduction-resistant layer for an impurity. Ar ion beams are projected from the oblique lateral direction so as to be made approximately vertical to the end surfaces to etch an SiO2 layer 4, and only one end surface is exposed. Si is diffused from the end surface to shape an n-type region 5, and the SiO2 layer 4 is removed. Likewise, Zn is diffused from the end surface, employing an SiO2 layer 6 exposed to the other surface as a mask and a p-type region 7 is formed on the other side, and the SiO2 layer 6 is gotten rid of. |
| 公开日期 | 1988-01-07 |
| 申请日期 | 1986-06-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86757]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | MIURA SHUICHI. Manufacture of semiconductor light-emitting device. JP1988002394A. 1988-01-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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