Semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | SUGAO SHIGEO |
| 发表日期 | 1988-08-18 |
| 专利号 | JP1988200580A |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To manufacture a semiconductor laser for efficiently oscillating with high speed modulation by forming a laminated layer structure on a substrate, forming a 3-step shape having a diffraction grating made of periodic uneven surfaces on the sidewall, laminating an active layer and a P-type conductive layer, and forming electrodes on the laminate. CONSTITUTION:A laminated structure of a semi-insulating buffer layer 11, an n type conductive layer 12 and a semiinsulating cap layer 13 is formed by a vapor growth method on an iron-doped semi-insulating InP substrate 10. Then, an SiO2 mask layer 27, and a Ti mask layer 26 are sequentially formed on the structure, a pattern of an electron beam resist 30 is formed, and a stepwise shape having a diffraction grating 28 including a periodic uneven surface on its sidewall is formed. Then, an active layer and a P-type conductive layer, etc., are laminated by a vapor growth method, and electrodes are formed by a photolithography on the laminate. Here, since a product has a small parasitic capacity, a high speed modulation of, for example, 10Gb/sec is performed whole holding an axial sole mode. Since an injecting current flows only to the active region, a high efficiency oscillation is achieved. Further, a product having excellent uniformity and reproducibility can be manufactured with high yield. |
| 公开日期 | 1988-08-18 |
| 申请日期 | 1987-02-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86759]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | SUGAO SHIGEO. Semiconductor laser and manufacture thereof. JP1988200580A. 1988-08-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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