Semiconductor laser
文献类型：专利
| 作者 | IKUWA YOSHITO |
| 发表日期 | 1990-09-13 |
| 专利号 | JP1990231784A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To enable fundamental-mode oscillation up to a high output by forming a semiconductor layer preventing the discontinuity of a valence band on the substrate side of a first clad layer and shaping the buried region of the side face of a stripe region in the multilayer structure of a semiconductor layer having forbidden band width larger than that of a semiconductor substrate and a semiconductor layer having forbidden band width smaller than that of the active layer of the stripe region. CONSTITUTION:A P-GaInP layer 11 is inserted between a buffer layer 2 composed of P-GaAs and a first clad layer 3 consisting of P-AlGaInP in a stripe region 10, thus preventing the discontinuity of a valence band. Since the buffer layer 2 made up of P-GaAs and a first buried layer 12 composed of P-AlGaInP are brought into contact directly in a buried region, however, there is discontinuity in the valance band. Consequently, leakage currents flowing through the first buried layer 12 consisting of P-GaInP are reduced. Since the effective refractive index of an active layer is lowered, a higher mode is not excited even when the width of the stripe region is increased. Accordingly, fundamental- mode oscillation is enabled up to a high output. |
| 公开日期 | 1990-09-13 |
| 申请日期 | 1989-03-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86760]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | IKUWA YOSHITO. Semiconductor laser. JP1990231784A. 1990-09-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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