Semiconductor laser
文献类型：专利
| 作者 | IKUWA YOSHITO; AOYANAGI TOSHITAKA |
| 发表日期 | 1989-07-20 |
| 专利号 | JP1989183189A |
| 著作权人 | 三菱電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To radiate a high output laser beam of basic mode and to obtain a semiconductor laser having a low threshold value by providing an active region having a refractive index distribution of small refractive index difference near the end face of a laser beam radiating side and a refractive index distribution of large refractive index difference in other region. CONSTITUTION:A thickness t2 is reduced and an equivalent refractive index difference N2 is increased in a region except the vicinity of a resonator end face 4, while a thickness t1 is increased and an equivalent refractive index difference N1 is decreased near the end face 4. Accordingly, a light enclosure to an active region 1 is improved in the region except the end face 4 of the laser light radiating side, a laser light containing a high order mode excited by the region except the vicinity of the end face having large refractive index difference near the end face 4 of the laser beam radiating side is converted to a basic mode, and then irradiated. Thus, the invasion of the laser beam to a low refractive index region 3 is increased and its optical density is decreased, and its output can be enhanced. |
| 公开日期 | 1989-07-20 |
| 申请日期 | 1988-01-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86764]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三菱電機株式会社 |
| 推荐引用方式 GB/T 7714 | IKUWA YOSHITO,AOYANAGI TOSHITAKA. Semiconductor laser. JP1989183189A. 1989-07-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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