Semiconductor laser device
文献类型：专利
| 作者 | KUBOTA MASAYUKI |
| 发表日期 | 1990-11-06 |
| 专利号 | JP1990271586A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To make it possible to monitor each light intensity of the beams independently, emitted from a plurality of light-emitting sections, by having a plurality of photo detectors ready that are provided corresponding to each laser beam emitted from the rear end and detect the wave-front converted laser beams from an optical wave guide layer as monitor beams. CONSTITUTION:The laser beams A', B' emitted from the rear end of a laser diode (LD) element 1 are wave-guided by an optical wave-guide layer 5. This wave-guide layer 5 has a lens 6 which converts the laser beams A', B' from diffused beams into condensed beams A'', B'', and the beams A'', B'', are separated and strike the photo detectors 32, 31 respectively provided on the rear ends of the optical wave-guide layer 5. This makes it possible to detect each light intensity of the beams A'', B'' by the photo detectors 32, 31 independently, and makes it possible to monitor each light intensity of the beams A, B emitting from the front of the 2-beam array LD element L. |
| 公开日期 | 1990-11-06 |
| 申请日期 | 1989-04-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86768]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KUBOTA MASAYUKI. Semiconductor laser device. JP1990271586A. 1990-11-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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