Semiconductor light emitting device
文献类型：专利
| 作者 | NAKATSU, HIROSHI; NAKAMURA, JUN-ICHI |
| 发表日期 | 1999-05-04 |
| 专利号 | US5900642 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | On a first cladding layer formed of n-type Al0.7Ga0.3P, an active region having a staggered-type (type II) heterojunction superlattice structure is disposed. The active region includes 50 light emitting layers formed of Al0.1Ga0.9P doped with nitrogen and 50 barrier layers formed of Al0.7Ga0.3P. The 50 light emitting layers and the 50 barrier layers formed of such materials are stacked alternately to form 50 pairs. On the active region, a second cladding layer formed of Al0.1Ga0.9P is disposed. In the formation of the active layers the composition of the light emitting layer and the barrier layer end the thickness of the barrier layer are controlled so that the isoelectronic level in the light emitting layer and the quantum level in the barrier layer will fulfill the resonance conditions. The carriers injected into the conduction band are confined in the quantum level in the barrier layer and transfer to the isoelectronic level in the light emitting layer by the resonance tunneling effect. |
| 公开日期 | 1999-05-04 |
| 申请日期 | 1998-02-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86770]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | NAKATSU, HIROSHI,NAKAMURA, JUN-ICHI. Semiconductor light emitting device. US5900642. 1999-05-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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