Semiconductor laser device
文献类型：专利
| 作者 | HATAGOSHI GENICHI; NAGASAKA HIROKO; SHIMADA NAOHIRO; YAMAMOTO MOTOYUKI; OKAJIMA MASASUE; KINOSHITA HIDEAKI; MATSUURA NOBUYUKI |
| 发表日期 | 1987-02-28 |
| 专利号 | JP1987046583A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To relax stress-strain on both interfaces of a current constriction layer by using a compound semiconductor material containing Al as the current constriction layer in the same manner as a clad layer and a waveguide layer. CONSTITUTION:An n-GaAlAs clad layer 12, a GaAlAs active layer 13, a p- GaAlAs clad layer 14 and an n-GaAlAs current constriction layer 15 are grown on an n-GaAs substrate 11 in succession. A photo-resist 21 is applied onto the current constriction layer 15, a striped window is formed, the current constriction layer 15 is etched selectively while using the window as a mask, and the clad layer 14 is etched up to its midway, thus shaping a striped groove section 22. The resist 21 is removed and the surface is washed and treated, and a p- GaAlAs waveguide layer 16 is grown and formed on the whole surface. Accordingly, the current constriction layer 15 is shaped by GaAlAs, thus matching a lattice between the upper and lower GaAlAs layers (14, 16), then relaxing stress strain on both interfaces of the current constriction layer 15. |
| 公开日期 | 1987-02-28 |
| 申请日期 | 1985-08-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86778]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | HATAGOSHI GENICHI,NAGASAKA HIROKO,SHIMADA NAOHIRO,et al. Semiconductor laser device. JP1987046583A. 1987-02-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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