Semiconductor laser
文献类型：专利
| 作者 | KURODA TAKAROU; KAJIMURA TAKASHI; UMEDA JIYUNICHI |
| 发表日期 | 1985-01-05 |
| 专利号 | JP1985000792A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain laser beams produced easily having good quality by a method wherein a substrate and an N-clad layer are provided with a solid-diffused layer having an impurity of the conductivity different from that of the substrate parallel with a multi-layer semiconductor layer by crossing a groove. CONSTITUTION:A photo resist width is formed in the surface of the N-GaAs substrate 6, and then the groove 7 is formed by chemical etching through this window. Next, etching is carried out after removal of a photo resist, and then an N-Ga1-xAlxAs layer 4, an N-GaAs layer 3, a P-Ga1-xAlxAs layer 2, and an N-GaAs layer 1 are grown by the use of this substrate 6. Then, an Al2O3 film is formed on the surface of the layer 1 by a CVD method, and a window the width of which is equal to that of the groove is bored, where Zn is thermally diffused in a selective manner, resulting in the formation of a Zn-diffused region. The Zn diffuses in solid state to the depth direction of the substrate because of the heat during the formation of the layer 1 or 2, thus forming a P type conductive region 5 in the surface part of the substrate 6. |
| 公开日期 | 1985-01-05 |
| 申请日期 | 1984-05-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86779]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | KURODA TAKAROU,KAJIMURA TAKASHI,UMEDA JIYUNICHI. Semiconductor laser. JP1985000792A. 1985-01-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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