Semiconductor laser array
文献类型：专利
| 作者 | ISSHIKI KUNIHIKO; SUZAKI WATARU |
| 发表日期 | 1988-01-23 |
| 专利号 | JP1988016693A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser array |
| 英文摘要 | PURPOSE:To obtain the difference of sufficient oscillation wavelength of 30nm or more and to produce a high output with high reliability as a recording laser by providing a semiconductor laser element having an impurity diffused region which arrives at an active layer except the vicinity of the end face of a resonator. CONSTITUTION:After an element separating groove 10 is formed on a laser wafer on which a clad layer 2 to a contact layer 5 are sequentially grown, the whole surface is formed with an Si3N4 film 1 After a pattern of the groove 9 is formed on the film 11, with the film 11 as a mask the layer 5 is etched by a contacting layer with a tartaric acid, hydrogen peroxide solution. A stripelike pattern is formed on the film 11, a wafer is sealed together with a diffusion source in a quartz ampule, heated in an electric furnace, and Zn is diffused with the film 11 as a mask. After the film 11 except on the groove 10 is removed by CF4 plasma, an ohmic electrode 6 is formed, the rear surface of the wafer is polished, and an ohmic electrode 7 is then formed. The groove 9 designated by a broken line is eventually cleaved at a discontinuous position to form an oscillator, and chips are separated. |
| 公开日期 | 1988-01-23 |
| 申请日期 | 1986-07-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86791]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | ISSHIKI KUNIHIKO,SUZAKI WATARU. Semiconductor laser array. JP1988016693A. 1988-01-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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