Semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | TSURUTA TORU; MATSUKI MICHIO |
| 发表日期 | 1987-07-15 |
| 专利号 | JP1987159487A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To restrain an increase of a contact resistance of electrodes even when the width of a current passage is narrowed by making the width of a stripe-form current injection region which is formed on a surface layer of a substrate larger than the stripe width in the region under the substrate surface layer. CONSTITUTION:On an N-type InP substrate 9, an N-type InP layer 10, an InGaAsP active layer 11, a P-type InP cladding layer 12 and an N-type InGaAsP cap layer 13 are formed to compose a substrate of double hetero structure (DH substrate). After forming a stripe-form opening 14 on the cap layer on a surface of the DH substrate, a mask having a stripe-form opening of width WC is formed and P-type impurities are diffused in a manner the diffusion front end in the region except the diffusing region of width Wd does not reach the cladding layer 12, thereby forming a diffusion region 15. |
| 公开日期 | 1987-07-15 |
| 申请日期 | 1986-01-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86795]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | TSURUTA TORU,MATSUKI MICHIO. Semiconductor laser and manufacture thereof. JP1987159487A. 1987-07-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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