Semiconductor laser device and manufacture thereof
文献类型：专利
| 作者 | OTSUKA NOBUYUKI; OSHIMA MASAAKI |
| 发表日期 | 1991-12-06 |
| 专利号 | JP1991276688A |
| 著作权人 | 松下電器産業株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and manufacture thereof |
| 英文摘要 | PURPOSE:To lessen the need to form an active layer into an inverted mesa form and to stabilize an etching form by a method wherein current blocking layers are arranged in a state that the mesa striped active layer, which is laminated on a first conductivity type semiconductor substrate and a second conductivity type current injected layer are held between the current blocking layers from both sides of the active layer and the current injected layer and the current blocking layers are formed into an n-i-p-i structure. CONSTITUTION:Current blocking layers 16 are arranged in such a way as to hold a mesa striped active layer 3, which is laminated on a first conductivity type semiconductor substrate 1, and a striped second conductivity type current injected layer 8, which is laminated on this layer 3, between them from both sides of the layers 3 and 8. The layers 16 are formed into an n-i-p-i structure (5 periods) which is a deposited layer of P-type InP layers 13, non-doped InP layers 14 and N-type InP layers 15. A current injected through a P side electrode 11 passes through a contact layer 9 and is converged in the layer 8. As this whole current is directly injected in a P-type InGaAsP waveguide layer 4 and the N-type InGaAsP active layer 3 and contributes to light emission, a luminous efficiency is increased. In particular, since the layers 16 are formed into the n-i-p-i structure, a breakdown strength is high and a thyristor effect is inhibited. |
| 公开日期 | 1991-12-06 |
| 申请日期 | 1990-03-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86797]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 松下電器産業株式会社 |
| 推荐引用方式 GB/T 7714 | OTSUKA NOBUYUKI,OSHIMA MASAAKI. Semiconductor laser device and manufacture thereof. JP1991276688A. 1991-12-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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