Manufacture of semiconductor light emitting device
文献类型：专利
| 作者 | TANAHASHI TOSHIYUKI; USHIJIMA ICHIROU; KOMIYAMA TAKESHI |
| 发表日期 | 1982-12-06 |
| 专利号 | JP1982198686A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor light emitting device |
| 英文摘要 | PURPOSE:To simplify the processes by providing a V shpae groove of in an InP substrate having a surface azimuth of (100), using InP series solutions wherein supercooling degrees are specified, respectively, forming an epitaxial layer in the groove and on the surface of the part other than the groove, and performing the epitaxial growth by one same process. CONSTITUTION:Anisotropic etching is performed on the surface of the N type InP substrate 10 having the surface azimuth of (100) by using Br methanol, and the V shaped groove 4 having the direction of is formed. Then said substrate 10 is mounted on a liquid phase epitaxial growing boat 1 Melted raw metal material liquid is placed in raw material wells 13 provided in a slider 12 and heated in an H2 atmosphere. Then the melted liquids 14-18 are formed. In this constitution, the InP series solution whose supercooling degree is larger than 10 deg.C is used as the melted liquid 14 and cooled at a rate of 0.2 deg.C/ min or more. At first, a P type InP layer 2 is grown on the substurate 10 except the groove 4. The InP series solution whose supercooling degree is 10 deg.C or less is used as the melted liquid 15 and cooled at the rate of 0.2 deg.C/min or less. Then, N type In layers 5 and 5' are grown in the groove 4 and on the layer 2. The procedure is repeated as required. |
| 公开日期 | 1982-12-06 |
| 申请日期 | 1981-06-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86802]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | TANAHASHI TOSHIYUKI,USHIJIMA ICHIROU,KOMIYAMA TAKESHI. Manufacture of semiconductor light emitting device. JP1982198686A. 1982-12-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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