Manufacture of semiconductor laser element
文献类型：专利
| 作者 | KAMIJIYOU TAKESHI; HASHIMOTO AKIHIRO; KOBAYASHI MASAO; FURUKAWA RIYOUZOU |
| 发表日期 | 1985-08-03 |
| 专利号 | JP1985147188A |
| 著作权人 | OKI DENKI KOGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser element |
| 英文摘要 | PURPOSE:To improve the crystallizability and reproducibility of an epitaxial layer constituting double hetero-structure by growing a high resistance layer to a substrate, etching the high resistance layer to form a groove and growing a plurality of layers in the groove and on the exposed surface of the substrate in an isotropic manner or an approximately isotropic manner in succession. CONSTITUTION:A high resistance layer 11 is grown uniformly on the upper surface 10a of a P-GaAs substrate 10. The layer 11 is composed of a GaAs layer (or a GaAlAs layer). A groove 11a is formed to the layer 1 The groove 11a must reach to the substrate 10, and may slightly reach to the inside of the substrate 10. Each layer necessary for constituting a double hetero-junction is grown on the surface of the grooved layer 11 and the exposed surface 10b of the substrate 10 in an isotropic manner or an approximately isotropic manner in succession. Upper side and lower side ohmic electrodes 16 and 17 are applied and shaped, but it is preferably that a semiconductor laser element is constitutd so that an insulating film 15 is formed on an upper side clad layer 14 and currents can be fed efficiently to the central section of an active layer 13. |
| 公开日期 | 1985-08-03 |
| 申请日期 | 1984-01-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86803]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI DENKI KOGYO KK |
| 推荐引用方式 GB/T 7714 | KAMIJIYOU TAKESHI,HASHIMOTO AKIHIRO,KOBAYASHI MASAO,et al. Manufacture of semiconductor laser element. JP1985147188A. 1985-08-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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