Manufacture of semiconductor laser
文献类型：专利
| 作者 | HASHIMOTO AKIHIRO; KOBAYASHI NOBUO; KAMIJO TAKESHI |
| 发表日期 | 1988-12-14 |
| 专利号 | JP1988306684A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To form effective refractive index distribution difference in a lateral direction and to control the oscillation of a basic mode by forming an upper clad layer on an active layer in a superlattice structure, and forming the exposed face as a nonoxidative thin film. CONSTITUTION:A P-type Al0.3Ga0.7As clad layer 2, an active layer 3, an N-type superlattice clad layer 4 and a P-type GaAs layer 5 are sequentially grown in this order on a P-type GaAs substrate The layer 4 is formed by alternately laminating a thin film 6 as an AlAs layer and a thin GaAs film 7 as a nonoxidative thin film. Then, the layer 5 is etched to form a stripe groove 8 and the remainder of the layer 5 is formed as a current constriction layer 5'. Thereafter, an N-type superlattice clad layer 9 is so regrown that aluminum has the same ratio as that of the layer 4, and an N-type GaAs ohmic contact layer 10 is then grown in a predetermined thickness. In this regrowth, an N-type diffused clad layer 11 in which its refractive index is reduced by disordering the layer 4 is formed under the layer 5'. |
| 公开日期 | 1988-12-14 |
| 申请日期 | 1987-06-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86809]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | HASHIMOTO AKIHIRO,KOBAYASHI NOBUO,KAMIJO TAKESHI. Manufacture of semiconductor laser. JP1988306684A. 1988-12-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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