Semiconductor laser
文献类型：专利
| 作者 | GOMYO AKIKO |
| 发表日期 | 1991-04-16 |
| 专利号 | JP1991091281A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To achieve laser oscillation with the shortest wavelength among semiconductor lasers having an activation layer of same composition and prevent such trouble as increase in the threshold value by doping Se to the activation layer in a semiconductor layer in a double hetero structure having a specific activation layer. CONSTITUTION:An n-type (Al0.5Ga0.5)0.5In0.5P clad layer 2, a Ga0.5In0.5P activation layer 3 where Se is doped, a P-type (Al0.5Ga0.5)0.5In0.5P clad layer 4, a P-type Ga0.5In0.5P layer 5, and a P-type GaAs cap layer 6 are allowed to grow in sequence on an n-type GaAs substrate 1 by a first pressure-reduction MOVPE. At this time, no deterioration of light-emitting efficiency is observed in a crystal where Se is doped at the activation layer 3, thus obtaining a semiconductor laser which oscillates with the shortest wavelength and has an improve oscillation property such as the oscillation threshold among lasers having (AlxGa1-x)0.5 In0.5P crystal of same composition as the activation layer. |
| 公开日期 | 1991-04-16 |
| 申请日期 | 1989-09-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86812]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | GOMYO AKIKO. Semiconductor laser. JP1991091281A. 1991-04-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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