Manufacture of photosemiconductor device
文献类型：专利
| 作者 | SHIMADA NAOHIRO; MOGI NAOTO |
| 发表日期 | 1985-01-12 |
| 专利号 | JP1985005582A |
| 著作权人 | TOSHIBA KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of photosemiconductor device |
| 英文摘要 | PURPOSE:To enable to preferably improve a buried layer in good reproducibility to form an active layer in the buried type by applying by an epitaxial growth a melt back from a layer which does not obtain aluminum wiht an oxidized film of a layer which contains aluminum on the surface of a semiconductor layer as a mask. CONSTITUTION:The surfaces of semiconductor layers 2-6 and 13, 14 formed on a GaAs substrate 1 are formed of a GaAs layer 14 which does not contain aluminum, and a Ga0.4Al0.6As layer 13 which contain aluminum. When etching it, the surfaces of the both layers 13, 14 are oxidized. When a solution of Ga0.65 5Al0.355As is inserted into unsaturated solution 15, a layer 13 which contains aluminum having an oxidized film 17 is formed on the surface by unsaturated solution 15 at the epitaxial growth time as a mask. The layer 14 which contains no aluminum is dissolved by melt back due to the solution 15. Accordingly, the projected layer 14 is contacted with the unsaturated solution 15, As is diffused from the surface of the crystal, and the melt back is started to be applied. The lateral melt back is acted with the layer 13 as the mask of the oxidized film, and stopped thereat. |
| 公开日期 | 1985-01-12 |
| 申请日期 | 1983-06-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86813]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA KK |
| 推荐引用方式 GB/T 7714 | SHIMADA NAOHIRO,MOGI NAOTO. Manufacture of photosemiconductor device. JP1985005582A. 1985-01-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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