Formation of end face film of semiconductor laser
文献类型：专利
| 作者 | MATOBA AKIHIRO; KAWAI YOSHIO; KAWAHARA MASATO; SERIZAWA YUKA |
| 发表日期 | 1987-09-22 |
| 专利号 | JP1987216387A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Formation of end face film of semiconductor laser |
| 英文摘要 | PURPOSE:To shade portions except end faces when end face films are coated and enable the end face films to be formed only on desired portions by preparing a support substrate formed with a groove therein, putting a semiconductor laser element piece in the groove with a resonator end face upward and coating a resonator end face film by evaporation, sputtering or the like. CONSTITUTION:A support substrate 5 is a silicon substrate and formed with a groove cut by a dicing saw to prescribed width and depth. A semiconductor laser element piece 1 is put in the groove of the support substrate 5 with a resonator end face upward and inclined relative to the groove. Then, a film is coated from a direction shown by an arrow 6 to form a resonator end face film. In coating the film, particles for forming the film are left fly from the direction 6 wherein the upper surface of the semiconductor laser element piece 1 is shaded by the resonator end face and the lower surface of the element piece 1 shaded by the upper surface of the support substrate 5. Thus, the film is formed only on the resonator end face 1b. |
| 公开日期 | 1987-09-22 |
| 申请日期 | 1986-03-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86817]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | MATOBA AKIHIRO,KAWAI YOSHIO,KAWAHARA MASATO,et al. Formation of end face film of semiconductor laser. JP1987216387A. 1987-09-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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