Distributed feedback type semiconductor laser
文献类型：专利
| 作者 | KUROSAKI TAKESHI; FUKUDA MITSUO |
| 发表日期 | 1992-01-22 |
| 专利号 | JP1992017384A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Distributed feedback type semiconductor laser |
| 英文摘要 | PURPOSE:To reduce a feedback light induction noise by providing a non- excitation region at a position coming in contact with an end face and utilizing a grating in the non-excitation region as a distributed reflector. CONSTITUTION:An InGaAsP guide layer 4, a p-type InP clad layer 5 and a p-type InGaAsP cap layer 6 having an n-type InP clad layer 2, an InGaAsP active layer 3 and a grating are in order formed on an n-type InP board 1, while an n-side electrode 7 is formed on the other side exposed surface of the board 1 and a p-side electrode 8 is formed on a cap layer 6 and a region 9, where the electrode 8 is not formed, is formed. Here, a current is not introduced into the active layer to make it a non-excitation region and inside this region, a grating on the top of a guide layer is made a distributed reflector. Further, a product KL of a coupling constant of the grating and the length of the non- excitation region is to be not less than 0.5. |
| 公开日期 | 1992-01-22 |
| 申请日期 | 1990-05-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86818]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | KUROSAKI TAKESHI,FUKUDA MITSUO. Distributed feedback type semiconductor laser. JP1992017384A. 1992-01-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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