Semiconductor laser array
文献类型：专利
| 作者 | YAMADA, HIROHITO |
| 发表日期 | 1999-03-23 |
| 专利号 | US5887012 |
| 著作权人 | NEC CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser array |
| 英文摘要 | A semiconductor laser array according to the invention is so constructed that plural LDs are driven by the same modulating signal, and series connection of the plural LDs becomes possible. Accordingly, efficiency of modulation of the aforementioned semiconductor laser array is largely improved. After a n-InP clad layer 6, an active layer 7 and a p-InP layer 8 are successively grown on a semi-insulating substrate 5, the n-InP clad layer 6 is etched and a stripe shaped mesa is formed. Then, a p-InP current blocking layer 9 and a n-InP current blocking layer 10 are grown on the etched portion. After fabricating a p+-InP cap layer 11 thereon, the surface of the n-InP clad layer 6 is exposed by selective etching. Moreover, a channel 12 for isolating the adjacent LDs, reaching the semi-insulating layer 5, is formed by penetrating the n-InP clad layer 6. Each of the LDs is provided with a p-side electrode 13 and a n-side electrode 14 thereon, and a p-side electrode 13 of any LD is connected to the n-side electrode of an adjacent LD by a bonding wire 3. |
| 公开日期 | 1999-03-23 |
| 申请日期 | 1996-12-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86821]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORPORATION |
| 推荐引用方式 GB/T 7714 | YAMADA, HIROHITO. Semiconductor laser array. US5887012. 1999-03-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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