Semiconductor laser equipment
文献类型：专利
| 作者 | ISHIKAWA MASAYUKI; NARIZUKA SHIGEYA; ITAYA KAZUHIKO |
| 发表日期 | 1991-03-18 |
| 专利号 | JP1991062584A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser equipment |
| 英文摘要 | PURPOSE:To realize sufficient impurity doping in a p-clad layer, and restrain the increase of threshold current at a high temperature caused by carrier overflow, by making the conductivity type of a clad layer on the substrate side p-type, and using Mg as dopant. CONSTITUTION:On a p-GaAs substrate 11, the following are grown in order; a p-GaAs buffer layer 12, a p-InGaP intermediate energy gap layer 13, a p- InGaAlP clad layer 14, an InGaAlp active layer 15, and an n-InGaAlp clad layer 16. A p-InGaAlp current blocking layer 17 having a stripe type aperture part is formed on the layer 16, and an n-GaAs ohmic contact layer 18 is formed on the layer 17. Before the growth of the buffer layer 12, Cp2Mg is supplied as the source of Mg, and the layers 12-14 are grown. When the growth of the layer 14 is finished, the supplying of Cp2Mg is stopped. |
| 公开日期 | 1991-03-18 |
| 申请日期 | 1989-07-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86824]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | ISHIKAWA MASAYUKI,NARIZUKA SHIGEYA,ITAYA KAZUHIKO. Semiconductor laser equipment. JP1991062584A. 1991-03-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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