Surface emission type semiconductor laser
文献类型：专利
| 作者 | MORI, KATSUMI; ASAKA, TATSUYA; IWANO, HIDEAKI; KONDO, TAKAYUKI |
| 发表日期 | 1995-07-25 |
| 专利号 | US5436922 |
| 著作权人 | SEIKO EPSON CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Surface emission type semiconductor laser |
| 英文摘要 | A surface emission type semiconductor laser includes a plurality of semiconductor layers defining at least one resonator in a direction perpendicular to the semiconductor substrate of the laser, the layers including at least a cladding layer in the semiconductor layers being formed into at least one column-like portion extending in a direction perpendicular to the semiconductor substrate, and a buried layer surrounding the column-like portion. The column-like portion is of rectangular cross-section in a plane parallel to the semiconductor substrate and having longer and shorter sides, whereby the polarization plane of said omitted laser beam is parallel to the direction of said shorter sides. |
| 公开日期 | 1995-07-25 |
| 申请日期 | 1994-03-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86827]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SEIKO EPSON CORPORATION |
| 推荐引用方式 GB/T 7714 | MORI, KATSUMI,ASAKA, TATSUYA,IWANO, HIDEAKI,et al. Surface emission type semiconductor laser. US5436922. 1995-07-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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