Semiconductor laser
文献类型：专利
| 作者 | MIZUTANI TAKASHI; BABA TOSHIO; OGAWA MASAKI |
| 发表日期 | 1985-04-10 |
| 专利号 | JP1985062179A |
| 著作权人 | NIPPON DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To avoid deterioration of reflecting surfaces by a method wherein, when an active layer held by clad layers is provided on the crystal of a substrate, the region encircled by reflecting surfaces exposed to both ends of the active layer is composed of alternately laminated body comprising the first semiconductor layers with the thickness less than electronic wavelength and the second semiconductor layer with less electronic affinity than that of the first semiconductor layer and the thickness making it easy for the electrons in the first semiconductor layer to tunnel through. CONSTITUTION:One conductive type first clad layer 2, an active layer 3 and a reverse conductive type second clad layer 4 are laminated and grown on the crystal of a substrate 1 to be a semiconductor laser. In such a constitution, the region 31 encircled by reflecting surfaces 5 of both ends 34 of the active layer 3 is composed of alternately laminated body comprising the first semiconductor layers 32 with the thickness less than electronic wavelength and the second semiconductor layer with less electronic affinity than that of the first semiconductor layer and the thickness making it easy for the electrons in the laser 32 to tunnel through. Simultaneously, the both ends 34 including the reflecting surfaces may be formed of the mixed crystal similar to the mean atomic composition of the alternately laminated body. |
| 公开日期 | 1985-04-10 |
| 申请日期 | 1983-09-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86830]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENKI KK |
| 推荐引用方式 GB/T 7714 | MIZUTANI TAKASHI,BABA TOSHIO,OGAWA MASAKI. Semiconductor laser. JP1985062179A. 1985-04-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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