Two-beam-array semiconductor laser device
文献类型：专利
| 作者 | MORI MASATAKA; YAGI TETSUYA |
| 发表日期 | 1991-04-02 |
| 专利号 | JP1991077387A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Two-beam-array semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a two-beam-array semiconductor laser device having both an LD for high output and an LD for low noise by preventing the current implantation V-groove of one of the two LD's from being etched at a part in the center. CONSTITUTION:A laser is made hard to excite and emitted laser beams are easily provided with many modes by forming a saturable absorber in the unetched center of the V-groove 4 of an LDB, therefore, the LDB has a low- noise characteristic and an LDA has a high-output characteristic. The coating films on the beam emitting front end faces of the two LD's have the same reflection factor, hence, the films can be formed at the same time, facilitating the work. |
| 公开日期 | 1991-04-02 |
| 申请日期 | 1989-08-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86832]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | MORI MASATAKA,YAGI TETSUYA. Two-beam-array semiconductor laser device. JP1991077387A. 1991-04-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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