Semiconductor laser
文献类型：专利
| 作者 | IKUWA YOSHITO |
| 发表日期 | 1992-02-28 |
| 专利号 | JP1992063484A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser in which characteristics are not varied during energizing and a visible light is scarcely deteriorated by composing of a disordered active layer and a pair of clad layers in which forbidden band widths for holding the active layer are wider than that of the active layer and an impurity concentration is lower than that of the active layer. CONSTITUTION:A disordered active layer 3 and a pair of clad layers 2, 4 in which forbidden band widths for holding the layer 3 are wider than that of the layer 3 and an impurity concentration is lower than that of the layer 3 are provided. In this case, since the Ga0.5In0.5P active layer 3 is formed in a completely disordered state, the state is not varied during energizing. Since the layer 3 has p-type carrier concentration equivalent to threshold value carrier density necessary to generate a laser oscillation, recombination of electrons and holes occurs between a conduction band and an acceptor level. Since the state density of an acceptor order is smaller than the state density of a valance band, light absorption of the layer 3 is reduced, and scarcely deteriorated. Thus, a laser in which characteristics are not varied and scarcely deteriorated, is obtained. |
| 公开日期 | 1992-02-28 |
| 申请日期 | 1990-07-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86836]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | IKUWA YOSHITO. Semiconductor laser. JP1992063484A. 1992-02-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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