Semiconductor laser
文献类型：专利
| 作者 | FURUSE TAKAO |
| 发表日期 | 1985-05-11 |
| 专利号 | JP1985083390A |
| 著作权人 | NIPPON DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain uniaxial-mode oscillation, which is lower in oscillation threshold value current and can be easily manufactured, by a method wherein a mesa part has a p-n junction and a semiconductor layer having a smaller width than the mesa width is provided at the mesa part. CONSTITUTION:An n type Al0.4Ga0.6As layer 2; an n type Al0.3Ga0.7As layer 3; an Al0.12Ga0.88As layer 4, which is used as an active layer; a p type Al0.6 Ga0.4As layer 5; a p type Al0.4Ga0.6As layer 6; and a p type GaAs layer 7 are successively formed on an n type GaAs substrate A mesa etching is performed up to reach the substrate 1 using chemical etching solution and a mesa part having an active region is formed. Then, when an etching is lightly performed while the etching solution is stired, the layer 5 only is etched and a neck 8 made narrower than the mesa width is formed. As a result, it can be easily attained to stop current, which leaks from parts other than the mesa region. |
| 公开日期 | 1985-05-11 |
| 申请日期 | 1983-10-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86841]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENKI KK |
| 推荐引用方式 GB/T 7714 | FURUSE TAKAO. Semiconductor laser. JP1985083390A. 1985-05-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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