Semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | YANASE TOMOO |
| 发表日期 | 1987-08-01 |
| 专利号 | JP1987176182A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To obtain a laser, in which high-speed modulation is possible, oscillation is highly efficient and its structure has high productivity, by passing most currents through an active layer by high-resistance current narrowing layers in crystal laminated bodies on both sides of the active layer, and decreasing capacitance without using a P-N junction for a current blocking layer. CONSTITUTION:On a P-type semiconductor substrate 11, the first crystal laminated bodies comprising a P-type buffer layer 12, a high-resistance current narrowing layer 13 and an N-type current narrowing layer 16 are epitaxially grown by a vapor phase growing method. When In metal including iron is used as a raw material for the high-resistance current narrowing layer 13, a high resistance layer is grown, and a sufficiently large value is obtained for the current narrowing. A large-area homogeneous wafer is obtained by the vapor phase growing method. Thus mass production property is improved. Then, a silicon oxide mask 21 having a stripe shaped window is formed on the surface of the current narrowing layer 16. A V-shaped groove is formed with bromomethanol. The second crystal laminated bodies comprising a P-type clad layer 14, an active layer 15 for laser oscillation, an N-type clad layer 17 and a contact layer 18 are sequentially grown epitaxially by a liquid phase growing method. Gold and zinc are used for a P-side electrode 19. Gold and tin are used for an N-side electrode 20. |
| 公开日期 | 1987-08-01 |
| 申请日期 | 1986-01-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86845]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | YANASE TOMOO. Semiconductor laser and manufacture thereof. JP1987176182A. 1987-08-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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