光半導体素子及びその製造方法
文献类型：专利
| 作者 | 寺門 知二; 味澤 昭; 山口 昌幸; 小松 啓郎 |
| 发表日期 | 1998-09-18 |
| 专利号 | JP2827411B2 |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 光半導体素子及びその製造方法 |
| 英文摘要 | PURPOSE:To lower an element capacity and to execute an ultrahigh-speed operation by a method wherein a high-resistance substrate is used, a semiconductor multilayer structure including an active layer is provided on it, and a wiring which connects an electrode formed at the upper part of the semiconductor multilayer structure to a bonding pad formed on the high-resistance semiconductor substrate is formed into an air-bridge structure. CONSTITUTION:An optical modulator is formed so as to have a structure in which both sides of a mesa stripe 6 composed of a multilayer structure by an InP buffer layer 2, an undoped InGaAsP waveguide layer 3, a p-InP clad layer 4 and a p-InGaAs cap layer 5 are filled into Fe-doped InP high-resistance layers 7. Bonding pads 15 composed of a metal are formed selectively on one main face of a high-resistance semiconductor substrate 1 composed of Fe-doped InP; an interconnection 14 which connects the optical modulator to the bonding pad 15 has an air-bridge structure on a semiconductor layer of the optical modulator. |
| 公开日期 | 1998-11-25 |
| 申请日期 | 1990-03-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86851]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | 寺門 知二,味澤 昭,山口 昌幸,等. 光半導体素子及びその製造方法. JP2827411B2. 1998-09-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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