Semiconductor laser
文献类型：专利
| 作者 | MATSUMOTO SHOHEI |
| 发表日期 | 1989-01-31 |
| 专利号 | JP1989028884A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To contrive the alleviation of a stress produced by Pt by forming a TiPtAu electrode formed over the whole surface of p-side of a semiconductor laser so that at least Pt is formed into stripe form in the adjacency of both outer parts of a stripe window for ohmic contact. CONSTITUTION:The conventional methods are applied to the processes, from formation of DH epitaxial crystal, BH epitaxial crystal and second stripe grooves 11 and 11' up to vacuum evaporation of TiPtAu 14-16. Next, after the vacuum evaporation of TiPtAu, the Au and Pt of about 3mum width, at a location 5mum outside a stripe window 13 for ohmic contact, are removed by a photoresist process and ion milling with a positive resist as a mask. The semiconductor laser having a cross-section thus formed is packaged and is subjected to WAPC aging of 10mum at 70 deg.C, so that the same high reliability as a CrAu electrode whose driving current deterioration degree is 7X10/H can be obtained. |
| 公开日期 | 1989-01-31 |
| 申请日期 | 1987-07-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86854]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | MATSUMOTO SHOHEI. Semiconductor laser. JP1989028884A. 1989-01-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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