Semiconductor light-emitting device
文献类型：专利
| 作者 | SHINOHARA KOUJI; NISHIJIMA YOSHITO; FUKUDA HIROKAZU; YAMAMOTO KOUSAKU |
| 发表日期 | 1985-01-18 |
| 专利号 | JP1985009187A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting device |
| 英文摘要 | PURPOSE:To reduce threshold currents, to improve efficiency and to stabilize a mode by forming a refractive-index guiding to a surface light-emission semiconductor light-emitting device. CONSTITUTION:A P type PbSnTe layer 2 as an active layer and an N type PbTe layer 3 as a second clad layer are grown on a P type PbTe substrate 1 using a (100) face as a main surface in succession. Mesa etching through which an active region is left in a shape such as a circle is executed up to depth reaching to the PbTe substrate An N type PbTe layer 4 and a P type PbTe layer 5 are grown on a surface to be etched in succession, and an N type PbTe layer 6 is grown on the whoel surface. The N type PbTe layer 6 functions as a contact layer for an N side electrode while also serving as a window layer, but the layer 6 grows on the whole surface of a base body when a growth onto the P type PbTe layer 5 progresses and the layer 6 reaches to a growing surface or the height of the upper surface of the N type PbTe layer 3. N side electrodes 7 and a P side electrode 8 are disposed by using a gold group material. The P side electrode 8 functions as one electrode while serving as a reflecting film. |
| 公开日期 | 1985-01-18 |
| 申请日期 | 1983-06-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86860]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | SHINOHARA KOUJI,NISHIJIMA YOSHITO,FUKUDA HIROKAZU,et al. Semiconductor light-emitting device. JP1985009187A. 1985-01-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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