Semiconductor laser
文献类型：专利
| 作者 | SAKIYAMA HAJIME; TANAKA HARUO; MUSHIGAMI MASAHITO |
| 发表日期 | 1990-08-01 |
| 专利号 | JP1990194586A |
| 著作权人 | ROHM CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To reduce threshold current and improve current efficiency by forming a first upper-part clad layer and an active layer in the same N type or an undoped layer and forming a P-type dopant ion implantation part at a part corresponding to the stripe groove on the first upper-part clad layer. CONSTITUTION:A lower-part clad layer 21, an N-type or an undoped active layer 22, an N-type or an undoped first upper-part clad layer 23, a light- absorbing layer 24, and an evaporation-prevention layer 25 are laminated in sequence and a first growth layer 2 is formed on a semiconductor substrate An evaporation-prevention layer 25 other than a part for forming a stripe groove 3 is covered with a photo resist 6 and etching is made to the evaporation-prevention layer 25 and the light-absorbing layer 24 so that the light-absorbing layer 24 may be left slightly, thus forming a stripe groove 3 of any width. Then, ion is implanted into the surface of the first upper-clad layer 23 and a P-type dopant ion implantation part 5 is formed at a part corre sponding to the stripe groove S of the first upper-part clad layer 23. The semi conductor substrate 1 is heated while applying As molecular rays, thus evaporat ing impurities such as an oxide adhered to the surface of the substrate 1 and forming a second growth layer 4. |
| 公开日期 | 1990-08-01 |
| 申请日期 | 1989-01-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86866]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ROHM CO LTD |
| 推荐引用方式 GB/T 7714 | SAKIYAMA HAJIME,TANAKA HARUO,MUSHIGAMI MASAHITO. Semiconductor laser. JP1990194586A. 1990-08-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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