半導体レーザ装置
文献类型：专利
| 作者 | 奥村 敏之; 猪口 和彦; 中津 弘志; 瀧口 治久 |
| 发表日期 | 1994-12-14 |
| 专利号 | JP1994103779B2 |
| 著作权人 | シャープ株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ装置 |
| 英文摘要 | PURPOSE:To facilitate the positioning of a waveguide by using a waveguide indication part as a reference by a method wherein the waveguide indication part is provided with the same lamination structure as a part of the lamination structure of a semiconductor laser element part. CONSTITUTION:The title device is provided with a semiconductor laser element part 8 and a waveguide indication part 9. The constitution of the semiconductor laser element 8 is similar to an ordinary semiconductor element having a buried hetero-structure; a cap layer 6 is extended in the horizontal direction from the semiconductor laser element part 8; the waveguide indication part 9 is arranged on the horizontally extended cap layer 6. The waveguide indication part 9 has the same structure as a lamination structure from the cap layer 6 of the semiconductor laser element part 8 to an active layer 3a of buried hetero-structure. Thereby, the position of the waveguide can be easily recognized by using the waveguide indication part 9 as a reference. |
| 公开日期 | 1994-12-14 |
| 申请日期 | 1988-12-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86867]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | シャープ株式会社 |
| 推荐引用方式 GB/T 7714 | 奥村 敏之,猪口 和彦,中津 弘志,等. 半導体レーザ装置. JP1994103779B2. 1994-12-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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