Liquid growth
文献类型：专利
| 作者 | SASAI YOICHI; OGURA MOTOTSUGU; ISHINO MASATO; KUBO MINORU |
| 发表日期 | 1988-01-11 |
| 专利号 | JP1988005516A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Liquid growth |
| 英文摘要 | PURPOSE:To obtain the desired film thickness by a method wherein a standby partition wall having the width wider than the width of a substrate is provided between the solution vessels in which the growing solution, with which a quantum well structure will be formed, is put in, and a barrier layer and a well layer are brought into contact with the growing solution at the independent sliding speed respectively. CONSTITUTION:The solution partition wall located between the solution 30 for a well layer and the solutions 29 and 31 for barrier layer is formed into a standby partition walls 3g and 3h besides the standby partition walls 3e and 3f provided at two places between the solutions 28 and 32 for clad layer and the solutions 29 and 31 for barrier layer, and said partition walls are slidingly moved at the prescribed constant speed between the standby partition walls 3e-3h with which a well layer solution 30 and the solutions 29 and 31 for barrier layer are pinched. Besides, the passing speed of substrate is regulated and the growing period is controlled so that the desired film thickness will be obtained. As a result, the arbitrary speed of the substrate 20 passing under the solutions 29 and 31 for barrier layer and the solution 30 for well layer can be set independently, and the film thickness of the barrier layers 22, 24 and 25 and the well layer 23 can be controlled in the desired thickness. |
| 公开日期 | 1988-01-11 |
| 申请日期 | 1986-06-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86871]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | SASAI YOICHI,OGURA MOTOTSUGU,ISHINO MASATO,et al. Liquid growth. JP1988005516A. 1988-01-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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