Manufacture of semiconductor laser device
文献类型：专利
| 作者 | KIMURA HIDE |
| 发表日期 | 1990-09-13 |
| 专利号 | JP1990231785A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser device having desired characteristics and performing high output operation by forming the width of an internal stripe in a manner that the difference of the quantities of melt-back generated in a subsequent liquid growth process is compensated by the difference of ridge width. CONSTITUTION:A V groove 3b having the broad width of W4 of an internal stripe in the region 11 of the board width of ridge sections having width D2 and a V groove 3a having the narrow width of W3 of the internal stripe in the region 12 of the narrow width of the ridge sections having width D1 are shaped so as to be penetrated to a block layer 2. Double-hetero structure composed of a lower clad layer, an active layer and an upper clad layer is formed onto the grooves, a contact layer is grown and shaped, and a P electrode and an N electrode are formed onto the rear of a substrate 1 and the top face of the contact layer. That is, the V grooves are shaped so as to compensate the magnitude of the difference of the quantities of melt-back generated by the difference of ridge width, thus equalizing the width of the internal stripe after melt-back. Accordingly, a semiconductor laser having desired characteristics and being operated with a high output is acquired. |
| 公开日期 | 1990-09-13 |
| 申请日期 | 1989-03-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86875]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KIMURA HIDE. Manufacture of semiconductor laser device. JP1990231785A. 1990-09-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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